Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta)
Rds On (Max) @ Id, Vgs 23 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.4V @ 250µA
Gate Charge (Qg) @ Vgs 10.5nC @ 10V
Input Capacitance (Ciss) @ Vds 478.9pF @ 15V
Power - Max 890mW
Mounting Type Surface Mount
Package / Case 8-PowerWDFN