Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3.3A (Ta)
Rds On (Max) @ Id, Vgs 55 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 555pF @ 10V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case SOT-23-6