Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 6.5A (Ta)
Rds On (Max) @ Id, Vgs 36 mOhm @ 3.5A, 1.8V
Vgs(th) (Max) @ Id 700mV @ 250µA
Gate Charge (Qg) @ Vgs 8.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds 151pF @ 10V
Power - Max 1.3W
Mounting Type -
Package / Case -