Specification
FET Type N and P-Channel Complementary
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 8.1A, 7A
Rds On (Max) @ Id, Vgs 32 mOhm @ 7A, 10V
Vgs(th) (Max) @ Id 2.1V @ 250µA
Gate Charge (Qg) @ Vgs 9.2nC @ 10V
Input Capacitance (Ciss) @ Vds 404.5pF @ 15V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SOIC (0.154", 3.90mm Width)
Buying Option 1
1
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INR 262.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 262.3