Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 5.3A (Ta)
Rds On (Max) @ Id, Vgs 60 mOhm @ 5.3A, 10V
Vgs(th) (Max) @ Id 3V @ 25µA
Gate Charge (Qg) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) @ Vds 1430pF @ 10V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-TSOP (0.130", 3.30mm Width)