Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
Rds On (Max) @ Id, Vgs 162 mOhm @ 1A, 1.8V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) @ Vgs 3.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 595pF @ 10V
Power - Max 700mW
Mounting Type Surface Mount
Package / Case 9-UFBGA, DSBGA