Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.6A (Ta)
Rds On (Max) @ Id, Vgs 205 mOhm @ 500mA, 8V
Vgs(th) (Max) @ Id 1.2V @ 250µA
Gate Charge (Qg) @ Vgs 0.959nC @ 4.5V
Input Capacitance (Ciss) @ Vds 198pF @ 10V
Power - Max 500mW
Mounting Type Surface Mount
Package / Case 3-XLGA