Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 72A (Tc)
Rds On (Max) @ Id, Vgs 8.9 mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id 1.15V @ 250µA
Gate Charge (Qg) @ Vgs 9.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1790pF @ 10V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad