Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Rds On (Max) @ Id, Vgs 58 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 4.3nC @ 4.5V
Input Capacitance (Ciss) @ Vds 435pF @ 10V
Power - Max 1.5W
Mounting Type Surface Mount
Package / Case 6-UFBGA, DSBGA