P CH MOSFET, NEXFET, -12V, -2.2A, DSBGA; P CH MOSFET, NEXFET, -12V, -2.2A, DSBGA-4; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:-4.5V
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Rds On (Max) @ Id, Vgs 82 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 2.4nC @ 4.5V
Input Capacitance (Ciss) @ Vds 325pF @ 6V
Power - Max 1W
Mounting Type Surface Mount
Package / Case 4-UFBGA, DSBGA