MOSFET, N-CH, 30V, 100A, 8SON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):950µohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V; Power Dissipation Pd:3.2W; Transistor Case Style:SON; No. of Pins:8; Operating Tempe
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 1.15 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 1.7V @ 250µA
Gate Charge (Qg) @ Vgs 51nC @ 4.5V
Input Capacitance (Ciss) @ Vds 9200pF @ 15V
Power - Max 3.2W
Mounting Type -
Package / Case 8-TDFN Exposed Pad
Buying Option 1
1
-
INR 1634.8
10
-
INR 1464
25
-
INR 1360.3
50
-
INR 1287.1
100
-
INR 1201.7
250
-
INR 1140.7
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 1634.8