Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs 5.4 mOhm @ 18A, 8V
Vgs(th) (Max) @ Id 1.7V @ 250µA
Gate Charge (Qg) @ Vgs 10nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1440pF @ 15V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad