Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 2 mOhm @ 30A, 8V
Vgs(th) (Max) @ Id 1.4V @ 250µA
Gate Charge (Qg) @ Vgs 25nC @ 4.5V
Input Capacitance (Ciss) @ Vds 4000pF @ 12.5V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-TDFN Exposed Pad