Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Rds On (Max) @ Id, Vgs 145 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id -
Gate Charge (Qg) @ Vgs 5.5nC @ 10V
Input Capacitance (Ciss) @ Vds 200pF @ 10V
Power - Max 900mW
Mounting Type Surface Mount
Package / Case SOT-23-5 Thin, TSOT-23-5