Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 9.4A (Ta)
Rds On (Max) @ Id, Vgs 153 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 9.4nC @ 10V
Input Capacitance (Ciss) @ Vds 497pF @ 25V
Power - Max 37.3W
Mounting Type Surface Mount
Package / Case SC-100, SOT-669, 4-LFPAK