MOSFET, N CH, 200V, 7A, TSDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):0.194ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:34W; Transistor Case Style:TSDSON; No. of Pins:8; Operating Tem
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Rds On (Max) @ Id, Vgs 225 mOhm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4V @ 13µA
Gate Charge (Qg) @ Vgs 5.6nC @ 10V
Input Capacitance (Ciss) @ Vds 430pF @ 100V
Power - Max 34W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN