Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 10.9A (Tc)
Rds On (Max) @ Id, Vgs 165 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 32µA
Gate Charge (Qg) @ Vgs 11.4nC @ 10V
Input Capacitance (Ciss) @ Vds 920pF @ 100V
Power - Max 62.5W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN