MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Drain Source Voltage Vds:-50V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs:-800mV; Power Dissipation Pd:300mW; Transistor Case Style:SOT-23; No. of Pins:3; Operating
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 50V
Current - Continuous Drain (Id) @ 25°C 130mA (Ta)
Rds On (Max) @ Id, Vgs 10 Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 45pF @ 25V
Power - Max 300mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
1
-
INR 140.3
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 140.3