Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Rds On (Max) @ Id, Vgs 4.5 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 250A
Gate Charge (Qg) @ Vgs 0.51nC @ 4.5V
Input Capacitance (Ciss) @ Vds 47pF @ 30V
Power - Max 300mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3