MOSFET,N CH,100V,0.17A,SOT23-3; Transistor Polarity:N Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:300mW; Transistor Case Style:SOT-23; No. of Pins:3; Operating Te
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 170mA (Ta)
Rds On (Max) @ Id, Vgs 6 Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 20pF @ 25V
Power - Max 360mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Buying Option 1
1
-
INR 303.17
10
-
INR 206.18
100
-
INR 97.6
250
-
INR 69.54
500
-
INR 53.07
1000
-
INR 37.21
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 303.17
Buying Option 2
1
-
INR 268.4
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 268.4
Buying Option 3
1
-
INR 66.49
Please check the minimum quantity and order multiple
Order Multiple:1
Price : 66.49