Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 2.9A
Rds On (Max) @ Id, Vgs 120 mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 20µA
Gate Charge (Qg) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) @ Vds 340pF @ 25V
Power - Max 1.8W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA