MOSFET P-CH 30V 3A SOT223; Transistor Polarity:P Channel; Continuous Drain Current Id:-1A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.8V; Power Dissipation Pd:5W; Transistor Case Style:SOT-223; No. of Pins:3; Operating Temper
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Rds On (Max) @ Id, Vgs 250 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) @ Vgs 25nC @ 10V
Input Capacitance (Ciss) @ Vds 250pF @ 20V
Power - Max 1.65W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA