Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 370mA (Ta)
Rds On (Max) @ Id, Vgs 6 Ohm @ 370mA, 10V
Vgs(th) (Max) @ Id 1.8V @ 50µA
Gate Charge (Qg) @ Vgs 2.4nC @ 10V
Input Capacitance (Ciss) @ Vds 70pF @ 25V
Power - Max 1.79W
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA