MOSFET P-CH 30V 470MA SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-280mA; Drain Source Voltage Vds:-30V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-680mV; Power Dissipation Pd:417mW; Transistor Case Style:SOT-23; No. of Pins:3; Operati
Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 470mA
Rds On (Max) @ Id, Vgs 900 mOhm @ 280mA, 4.5V
Vgs(th) (Max) @ Id 680mV @ 1mA
Gate Charge (Qg) @ Vgs 2.2nC @ 4.5V
Input Capacitance (Ciss) @ Vds 110pF @ 24V
Power - Max 417mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3