MOSFET, N CH, 100V, 0.85A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:500mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:830mW; Transistor Case Style:SOT-23; No. of Pins:3; Operatin
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 500mA
Rds On (Max) @ Id, Vgs 500 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) @ Vgs 4.6nC @ 10V
Input Capacitance (Ciss) @ Vds 138pF @ 25V
Power - Max 360mW
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3