MOSFET, N-CH, 150V, 21A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:21A; Drain Source Voltage Vds:150V; On Resistance Rds(on):0.042ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:57W; Transistor Case Style:SuperSOT; No. of Pins:8; Operating T
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Rds On (Max) @ Id, Vgs 52 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 35µA
Gate Charge (Qg) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) @ Vds 890pF @ 75V
Power - Max 57W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN