Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 11.3A (Tc)
Rds On (Max) @ Id, Vgs 125 mOhm @ 5.7A, 10V
Vgs(th) (Max) @ Id 4V @ 25µA
Gate Charge (Qg) @ Vgs 8.7nC @ 10V
Input Capacitance (Ciss) @ Vds 680pF @ 100V
Power - Max 50W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN