Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 14.9A (Ta), 78.6A (Tc)
Rds On (Max) @ Id, Vgs 8.4 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 110µA
Gate Charge (Qg) @ Vgs 57.7nC @ 10V
Input Capacitance (Ciss) @ Vds 4240pF @ 15V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN