MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:50W; Transistor Case Style:PG-TSDSON; No. of Pins:8; Operating
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs 5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) @ Vgs 46nC @ 10V
Input Capacitance (Ciss) @ Vds 3600pF @ 15V
Power - Max 50W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN