MV POWER MOS; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.7V; Power Dissipation Pd:139W; Transistor Case Style:TDSON; No. of Pins:8; Operating Temperature Max:150
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 2.8 mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2.2V @ 93µA
Gate Charge (Qg) @ Vgs 175nC @ 10V
Input Capacitance (Ciss) @ Vds 13000pF @ 30V
Power - Max 139W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN