MOSFET, N CH, 100A, 20V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:20V; On Resistance Rds(on):2.1mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:950mV; Power Dissipation Pd:78W; Transistor Case Style:PG-TSDSON; No. of Pins:8; Ope
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 2.6 mOhm @ 50A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200µA
Gate Charge (Qg) @ Vgs 52.7nC @ 4.5V
Input Capacitance (Ciss) @ Vds 7800pF @ 10V
Power - Max 78W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN