MOSFET, N-CH, 30V, 100A, 8TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:83W; Transistor Case Style:SuperSOT; No. of Pins:8; Operatin
Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs 2.5 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) @ Vgs 74nC @ 10V
Input Capacitance (Ciss) @ Vds 6100pF @ 15V
Power - Max 83W
Mounting Type Surface Mount
Package / Case 8-PowerTDFN