Specification
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 278A
Rds On (Max) @ Id, Vgs 5 mOhm @ 125A, 10V
Vgs(th) (Max) @ Id 4V @ 5mA
Gate Charge (Qg) @ Vgs 700nC @ 10V
Input Capacitance (Ciss) @ Vds 20000pF @ 25V
Power - Max 780W
Mounting Type Chassis Mount
Package / Case SP4