Specification
FET Type 2 N-Channel (Half Bridge)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 42A
Rds On (Max) @ Id, Vgs 100 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id 3.9V @ 3mA
Gate Charge (Qg) @ Vgs 273nC @ 10V
Input Capacitance (Ciss) @ Vds 6761pF @ 25V
Power - Max 416W
Mounting Type Chassis Mount
Package / Case SP4