Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs 4.5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 140nC @ 10V
Input Capacitance (Ciss) @ Vds 7820pF @ 40V
Power - Max 1.9W
Mounting Type Through Hole
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA