Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 1000V (1kV)
Current - Continuous Drain (Id) @ 25°C 4A (Tc)
Rds On (Max) @ Id, Vgs 4.2 Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) @ Vgs 23nC @ 10V
Input Capacitance (Ciss) @ Vds 1150pF @ 25V
Power - Max 42W
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack