Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 7.5A, 6.6A
Rds On (Max) @ Id, Vgs 28 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) @ Vgs 16.6nC @ 4.5V
Input Capacitance (Ciss) @ Vds 820pF @ 15V
Power - Max 2.5W
Mounting Type Through Hole
Package / Case 8-DIP (0.300", 7.62mm)