Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 23A (Tc)
Rds On (Max) @ Id, Vgs 19 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 1.1V @ 250µA
Gate Charge (Qg) @ Vgs 15nC @ 10V
Input Capacitance (Ciss) @ Vds 630pF @ 10V
Power - Max 3.1W
Mounting Type Surface Mount
Package / Case 8-PowerVDFN