Specification
FET Type 2 N-Channel (Dual), Schottky
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 60A, 85A
Rds On (Max) @ Id, Vgs 5.2 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 2.3V @ 250µA
Gate Charge (Qg) @ Vgs 21nC @ 10V
Input Capacitance (Ciss) @ Vds 1560pF @ 15V
Power - Max 2W, 2.2W
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad