Specification
FET Type 2 N-Channel (Dual) Asymmetrical
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10A, 13.8A
Rds On (Max) @ Id, Vgs 13.7 mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) @ Vgs 17nC @ 10V
Input Capacitance (Ciss) @ Vds 910pF @ 15V
Power - Max 1.9W, 2.1W
Mounting Type Surface Mount
Package / Case 8-VDFN Exposed Pad