Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 12V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Rds On (Max) @ Id, Vgs 20 mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id 850mV @ 250µA
Gate Charge (Qg) @ Vgs 23nC @ 4.5V
Input Capacitance (Ciss) @ Vds 2100pF @ 6V
Power - Max 2.5W
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead