Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)
Rds On (Max) @ Id, Vgs 22 mOhm @ 8A, 2.5V
Vgs(th) (Max) @ Id 650mV @ 250µA
Gate Charge (Qg) @ Vgs 18nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1465pF @ 4V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad