Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Rds On (Max) @ Id, Vgs 72 mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) @ Vds 415pF @ 50V
Power - Max 2.8W
Mounting Type Surface Mount
Package / Case 6-UDFN Exposed Pad