Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 38A (Tc)
Rds On (Max) @ Id, Vgs 17 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) @ Vgs 38nC @ 10V
Input Capacitance (Ciss) @ Vds 2200pF @ 15V
Power - Max 2.1W
Mounting Type Surface Mount
Package / Case 3-Non Standard SMD