Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 7A (Tc)
Rds On (Max) @ Id, Vgs 1.3 Ohm @ 3.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) @ Vgs 24nC @ 10V
Input Capacitance (Ciss) @ Vds 1170pF @ 25V
Power - Max 178W
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA