Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 8V
Current - Continuous Drain (Id) @ 25°C 3.5A (Ta)
Rds On (Max) @ Id, Vgs 28 mOhm @ 1.5A, 2.5V
Vgs(th) (Max) @ Id 650mV @ 250µA
Gate Charge (Qg) @ Vgs 27nC @ 4.5V
Input Capacitance (Ciss) @ Vds 1935pF @ 4V
Power - Max 550mW
Mounting Type Surface Mount
Package / Case 4-XFBGA, CSPBGA