Specification
FET Type MOSFET N-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 80V
Current - Continuous Drain (Id) @ 25°C 11A (Ta), 105A (Tc)
Rds On (Max) @ Id, Vgs 6.9 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 3.7V @ 250µA
Gate Charge (Qg) @ Vgs 81nC @ 10V
Input Capacitance (Ciss) @ Vds 4870pF @ 40V
Power - Max 2.1W
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB