Specification
FET Type MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta)
Rds On (Max) @ Id, Vgs 120 mOhm @ 1.8A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250µA
Gate Charge (Qg) @ Vgs 6.24nC @ 4.5V
Input Capacitance (Ciss) @ Vds 524pF @ 10V
Power - Max 630mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363