Specification
FET Type 2 P-Channel (Dual)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 600mA
Rds On (Max) @ Id, Vgs 800 mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 900mV @ 250µA
Gate Charge (Qg) @ Vgs -
Input Capacitance (Ciss) @ Vds 100pF @ 10V
Power - Max 400mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666