Specification
FET Type N and P-Channel
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 600mA, 500mA
Rds On (Max) @ Id, Vgs 650 mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) @ Vgs 1nC @ 4.5V
Input Capacitance (Ciss) @ Vds 45pF @ 10V
Power - Max 380mW
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666